Activation energy of source-drain current in hydrogenated and unhydrogenated polysilicon thin-film transistors
- 1 July 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (7) , 1727-1734
- https://doi.org/10.1109/16.55761
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Transient photocurrent response in polycrystalline silicon thin filmsJournal of Applied Physics, 1987
- Subthreshold model of a polycrystalline silicon thin-film field-effect transistorApplied Physics Letters, 1987
- Effects of Hydrogenation on the Off-State of Polysilicon Thin Film TransistorsMRS Proceedings, 1987
- A comprehensive analytic model of accumulation-mode MOSFET's in PolySilicon thin filmsIEEE Transactions on Electron Devices, 1986
- Leakage Currents in P-Channel Accumulation Mode Tft'sMRS Proceedings, 1985
- Physics of amorphous silicon based alloy field-effect transistorsJournal of Applied Physics, 1984
- Theory of conduction in polysilicon: Drift-diffusion approach in crystalline-amorphous-crystalline semiconductor system—Part I: Small signal theoryIEEE Transactions on Electron Devices, 1984
- Theory of conduction in polysilicon: Drift-diffusion approach in crystalline-amorphous-crystalline semiconductor system—Part II: General I-V theoryIEEE Transactions on Electron Devices, 1984
- Density of gap states of silicon grain boundaries determined by optical absorptionApplied Physics Letters, 1983
- Theory of Mosfet Operation in Small-Grain PolysiliconMRS Proceedings, 1981