Effects of Hydrogenation on the Off-State of Polysilicon Thin Film Transistors
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Transient photocurrent response in polycrystalline silicon thin filmsJournal of Applied Physics, 1987
- A comprehensive analytic model of accumulation-mode MOSFET's in PolySilicon thin filmsIEEE Transactions on Electron Devices, 1986
- Leakage Currents in P-Channel Accumulation Mode Tft'sMRS Proceedings, 1985
- Effects of grain boundary passivation on the characteristics of p -channel MOSFETs in LPCVD polysiliconElectronics Letters, 1983
- Density of gap states of silicon grain boundaries determined by optical absorptionApplied Physics Letters, 1983