Leakage Currents in P-Channel Accumulation Mode Tft's
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Effects of Grain Boundaries on the Current-Voltage Characteristics of SOI MosfetsMRS Proceedings, 1984
- N-Channel and P-Channel LPCVD Polysilicon Mosfet's and Effects of Grain Boundary PassivationMRS Proceedings, 1984
- Passivation of grain boundaries in polycrystalline siliconApplied Physics Letters, 1979