Effects of Grain Boundaries on the Current-Voltage Characteristics of SOI Mosfets
- 1 January 1984
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET'sIEEE Transactions on Electron Devices, 1983
- Effects of grain boundaries on the channel conductance of SOl MOSFET'sIEEE Transactions on Electron Devices, 1983
- Field effect in large grain polycrystalline siliconIEEE Transactions on Electron Devices, 1983
- A charge-sheet model of the MOSFETSolid-State Electronics, 1978
- I-V characteristics of polycrystalline silicon resistorsRevue de Physique Appliquée, 1978
- Current Flow across Grain Boundaries inn-Type Germanium. IJournal of Applied Physics, 1961