Analysis of current voltage characteristics of low-temperature-processed polysilicon thin-film transistors
- 1 April 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (4) , 792-802
- https://doi.org/10.1109/16.127467
Abstract
The relationship between device performance and trap state density in polysilicon films was investigated. The density in the silicon energy gap was obtained by fitting the calculated on-state current versus gate voltage curve to the measured one for low-temperature (Keywords
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