Mechanism and device-to-device variation of leakage current in polysilicon thin film transistors
- 4 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 867-870
- https://doi.org/10.1109/iedm.1990.237025
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Effects of Hydrogenation on the Off-State of Polysilicon Thin Film TransistorsMRS Proceedings, 1987
- Schottky barriers on phosphorus-doped hydrogenated amorphous silicon: The effects of tunnelingPhysical Review B, 1986
- Anomalous leakage current in LPCVD PolySilicon MOSFET'sIEEE Transactions on Electron Devices, 1985