Effects of Trap State on Field-Effect Mobility of MOSFET's Formed on Large-Grain Polysilicon Films
- 1 December 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (12A) , L2291-2293
- https://doi.org/10.1143/jjap.28.l2291
Abstract
Electrical characteristics of large-grain polysilicon transistors for various grain sizes were examined. The field-effect mobilities of poly-Si transistors were studied based on the thermionic emission model with potential barriers at grain boundaries. Electron mobility within the grains was evaluated and found to be 194 cm2/V·s. Our result indicates that, using the electron mobility within the grains, the thermionic emission model can be applied to poly-Si films with relatively large grain sizes.Keywords
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