Chemical Vapor Deposition of Insulating Films using Nitrogen Trifluoride
- 1 March 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (3R)
- https://doi.org/10.1143/jjap.23.376
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Chemical vapor deposition and characterization of phosphorus nitride (P3N5) gate insulators for InP metal-insulator-semiconductor devicesJournal of Applied Physics, 1982
- Passivation of GaAs surfaces by GaOxNy films and by multilayersSurface Science, 1979
- The Use of Metalorganics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1971
- Epitaxial growth of aluminum nitrideSolid-State Electronics, 1967