Hot filament enhanced chemical vapor deposition of AlN thin films

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Abstract
Hot filament enhanced chemical vapor deposition of aluminum nitride thin films from trimethylaluminum and ammonia has been investigated for deposition temperatures ranging from 584 to 732 K. The use of a hot filament resulted in an approximate two orders of magnitude increase in the deposition rate compared to a similar, uncatalyzed growth. The film deposition rate and refractive index did not depend on the substrate temperature. X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy indicated that the films were high purity aluminum nitride, with negligible carbon and oxygen contamination.