Large-area electrochemical planing of p-type gallium arsenide for photocathodes

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Abstract
A large-area precision-thinning technique has been developed for p-type GaAs and its use in fabricating III/V transmission photocathodes has led to a marked improvement in the thickness uniformity of the active layers. The technique employs a raster-scanned, feedback-controlled, electrochemical planning method which eliminates the need to grow a 'stopping layer'. Samples having both (100) and (111)B oriented output surfaces have been processed, a shiny reflecting finish being produced in both cases provided that the appropriate method is used for regulating the etching current.