Effect of strain on the band structure of InGaAs
- 1 April 1990
- journal article
- Published by IOP Publishing in Physica Scripta
- Vol. 41 (4) , 617-620
- https://doi.org/10.1088/0031-8949/41/4/053
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Band structure of InGaAsJournal of Vacuum Science & Technology A, 1989
- Effect of strain on the band structure of GaAs and In0.2Ga0.8AsApplied Physics Letters, 1988
- A toroidal angle-resolving electron spectrometer for surface studiesApplied Surface Science, 1985
- Electronic structure of GaAs under strainPhysical Review B, 1984