Effect of growth temperature and substrate materials on epitaxial growth of coronene

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Abstract
Epitaxialgrowth of coronene ( C 24 H 12 ) was studied on substrates having no dangling bonds, such as hydrogen-terminated Si (111), MoS 2 , MoTe 2 , and muscovite by using reflection high-energy electron diffraction. It was found that the sticking coefficient and the maximum thickness of the epitaxialfilms are strongly dependent on the substrate materials as well as on the growth temperature. The effectiveness of molecular mechanics calculation was examined by comparing the calculated stabilization energies with the experimental results. Importance of the electronic structure of substrates has been revealed and its effect was estimated quantitatively using the Lifshitz theory. The tendency that the interfacial dispersion force is stronger for smaller band gapmaterials has been shown from theoretical consideration.