Room-temperature growth of ZrO2 thin films using a novel hyperthermal oxygen-atom source
- 1 January 1999
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 17 (1) , 14-18
- https://doi.org/10.1116/1.581547
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Room-temperature oxidation of a GaAs(001) surface induced by the interaction of hyperthermal atomic oxygen and studied by x-ray photoelectron spectroscopy and ion scattering spectroscopyApplied Physics Letters, 1998
- Oxide growth on silicon (100) in the plasma phase of dry oxygen using an electron cyclotron resonance sourceJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Performance characteristics of a hyperthermal oxygen atom generatorMeasurement Science and Technology, 1994
- Epitaxial Oxide FilmsMRS Proceedings, 1994
- Common Themes in ther Epitaxial Growth of Oxides on SemiconductorsMRS Proceedings, 1994
- Electron stimulated desorption of oxygen atoms and ions from an oxidized AgZr alloy surfaceSurface Science, 1993
- Flux measurement of a hyperthermal atomic oxygen beamJournal of Vacuum Science & Technology A, 1993
- Electron-energy-loss study of clean and oxygen-exposed polycrystalline zirconiumPhysical Review B, 1987
- Algorithms for the rapid simulation of Rutherford backscattering spectraNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Smoothing and Differentiation of Data by Simplified Least Squares Procedures.Analytical Chemistry, 1964