Plasma-assisted MBE growth of GaN and InGaN on different substrates

This publication has 10 references indexed in Scilit:

• Structural perfection of GaN epitaxial layers according to x-ray diffraction measurements
  Physics of the Solid State, 1999
• Growth of GaN by molecular-beam epitaxy with activation of the nitrogen by a capacitive rf magnetron discharge
  Technical Physics Letters, 1998
• Point-defect complexes and broadband luminescence in GaN and AlN
  Physical Review B, 1997
• GaN epitaxial growth on neodium gallate substrates
  Solid-State Electronics, 1997
• Radiative carrier lifetime, momentum matrix element, and hole effective mass in GaN
  Applied Physics Letters, 1997
• Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
  Applied Physics Letters, 1996
• High-resolution x-ray analysis of InGaN/GaN superlattices grown on sapphire substrates with GaN layers
  Applied Physics Letters, 1996
• Spatial distribution of the luminescence in GaN thin films
  Applied Physics Letters, 1996
• Asymmetric Cracking in Znse/ZnSxSel−x Superlattices Grown by Molecular Bean Epitaxy
  MRS Proceedings, 1987
• Fundamental energy gap of GaN from photoluminescence excitation spectra
  Physical Review B, 1974