HIGH-TEMPERATURE X-RAY TOPOGRAPHY OF Si WAFERS STRAINED BY THIN SURFACE FILMS
- 15 September 1966
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 9 (6) , 245-246
- https://doi.org/10.1063/1.1754732
Abstract
Room-temperature and elevated-temperature transmission x-ray topographs of Si wafers coated with different types of films were taken to show the change in the stress in the films as a function of temperature. Anodic oxide films grown at 100°C show a reversal of the sense of stress at 200°C, while steam oxide, grown at 1200°C, show almost no change in topographs taken up to 800°C. In the case of metal films, the stress in Pt films vanishes at 230°C and remains absent at least up to 615°C, while little change is seen in W films, even in topographs taken at 800°C.Keywords
This publication has 4 references indexed in Scilit:
- Measurement of Strains at Si-SiO2 InterfaceJournal of Applied Physics, 1966
- Strain in Thin Metal Films on QuartzJournal of Applied Physics, 1966
- X-Ray Extinction Contrast Topography of Silicon Strained by Thin Surface FilmsJournal of Applied Physics, 1965
- Stresses in Anodic FilmsJournal of the Electrochemical Society, 1963