Phosphorus doping of silicon by means of neutron irradiation
- 1 August 1976
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 23 (8) , 803-805
- https://doi.org/10.1109/t-ed.1976.18488
Abstract
Phosphorus doping of silicon with the aid of neutron irradiation is a very effective method to produce silicon single crystals with a homogeneous resistivity distribution and an exact average resistivity. The doping process is described and some aspects are given for the handling of the irradiated silicon. Experimental results concerning the resistivity distribution and the accuracy of aim are presented.Keywords
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