GaAs traveling-wave directional coupler optical modulator/switch

16 July 1990

journal article
conference paper
Published by AIP Publishing in Applied Physics Letters

Vol. 57 (3) , 227-228
https://doi.org/10.1063/1.103723

Abstract

Device structure, fabrication method, and experimental results of a GaAs/AlGaAs traveling-wave directional coupler optical modulator/switch operated at 1.06 μm wavelength are described for the first time. An extinction ratio of 13.7 dB has been measured at the switching voltage of 10.4 V, and a 3 dB bandwidth of 9.1 GHz has been demonstrated for a device with a waveguide width of 5.5 μm, waveguide spacing of 3.5 μm, and length of 8 mm.

Keywords

This publication has 8 references indexed in Scilit:

GaAs traveling-wave polarization electro-optic waveguide modulator with bandwidth in excess of 20 GHz at 1.3 μm
Applied Physics Letters, 1987
GaAs PIN electro-optic travelling-wave modulator at 1.3 μm
Electronics Letters, 1986
Electrooptic Properties and Raman Scattering in InP
Japanese Journal of Applied Physics, 1984
Wavelength variation of 1.6 µm wavelength buried heterostructure GaInAsP/InP lasers due to direct modulation
IEEE Journal of Quantum Electronics, 1982
Calibration of optical modulator frequency response with application to signal level control
Applied Optics, 1978
A new light modulator using perturbation of synchronism between two coupled guides
Applied Physics Letters, 1974
Properties of Microstrip Line on Si-SiO/sub 2/ System
IEEE Transactions on Microwave Theory and Techniques, 1971
Parameters of Microstrip Transmission Lines and of Coupled Pairs of Microstrip Lines
IEEE Transactions on Microwave Theory and Techniques, 1968