Sidewall damage in n+-GaAs quantum wires from reactive ion etching
- 22 May 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (21) , 2130-2132
- https://doi.org/10.1063/1.101368
Abstract
Electron cyclotron resonance and radio frequency reactive ion etching have been used to fabricate narrow n+‐GaAs wires employing CCl2F2/He as the etch gas. A comparison of the induced sidewall damage is made using room‐temperature conductivity measurements of the etched structures and the effect of overetching is investigated. In addition, preliminary analysis of low‐temperature transport reveals that the amplitude of universal conductance fluctuations is extremely sensitive to sidewall damage.Keywords
This publication has 22 references indexed in Scilit:
- Plasma characterization of an electron cyclotron resonance–radio-frequency hybrid plasma reactorJournal of Vacuum Science & Technology A, 1989
- Narrow conducting channels defined by helium ion beam damageApplied Physics Letters, 1988
- Electronic spectroscopy of zero-dimensional systemsPhysical Review B, 1988
- Observation of discrete electronic states in a zero-dimensional semiconductor nanostructurePhysical Review Letters, 1988
- Ultrasmall device fabrication using dry etching of gaasMicroelectronic Engineering, 1986
- Submicron conducting channels defined by shallow mesa etch in GaAs-AlGaAs heterojunctionsApplied Physics Letters, 1986
- Fabrication of small laterally patterned multiple quantum wellsApplied Physics Letters, 1986
- Damage and contamination-free GaAs and AlGaAs etching using a novel ultrahigh-vacuum reactive ion beam etching system with etched surface monitoring and cleaning methodJournal of Vacuum Science & Technology A, 1986
- Surface Damage on GaAs Induced by Reactive Ion Etching and Sputter EtchingJournal of the Electrochemical Society, 1986
- Effects of ion species and adsorbed gas on dry etching induced damage in GaAsJournal of Vacuum Science & Technology B, 1985