Spectral optical functions of silicon in the range of 1.13-4.96 eV at elevated temperatures
- 31 May 1997
- journal article
- Published by Elsevier in International Journal of Heat and Mass Transfer
- Vol. 40 (7) , 1591-1600
- https://doi.org/10.1016/s0017-9310(96)00205-0
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- High temperature radiative properties of thin polysilicon films at the λ = 0.6328 μm wavelengthInternational Journal of Heat and Mass Transfer, 1993
- The temperature dependence of the refractive index of silicon at elevated temperatures at several laser wavelengthsJournal of Applied Physics, 1986
- Optical functions of silicon between 1.7 and 4.7 eV at elevated temperaturesPhysical Review B, 1983
- Optical constants for silicon at 300 and 10 K determined from 1.64 to 4.73 eV by ellipsometryJournal of Applied Physics, 1982
- Optical Properties of the Interface between Si and Its Thermally Grown OxidePhysical Review Letters, 1979
- Optical Evidence for a Silicon‐Silicon Oxide InterlayerJournal of the Electrochemical Society, 1979
- Electroreflectance and ellipsometry of silicon from 3 to 6 eVPhysical Review B, 1978
- Symmetry analysis of thestructures in Si by low-field electroreflectancePhysical Review B, 1977
- Design and operation of an automated, high-temperature ellipsometerJournal of the Optical Society of America, 1974
- Interspecimen Comparison of the Refractive Index of Fused Silica*,†Journal of the Optical Society of America, 1965