First-principles calculations of electronic structures of diluted magnetic semiconductors (Ga,Mn)As
- 1 May 1999
- journal article
- Published by Elsevier in Journal of Magnetism and Magnetic Materials
- Vol. 196-197, 428-429
- https://doi.org/10.1016/s0304-8853(98)00794-x
Abstract
No abstract availableFunding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 6 references indexed in Scilit:
- Transport properties and origin of ferromagnetism in (Ga,Mn)AsPhysical Review B, 1998
- Band structures of zinc-blende-type MnAs and (MnAs)1(GaAs)1 superlatticeJournal of Magnetism and Magnetic Materials, 1998
- Growth and properties of (Ga, Mn) As: A new III–V diluted magnetic semiconductorApplied Surface Science, 1997
- The s,p-d exchange interaction in GaAs heavily doped with MnSolid State Communications, 1996
- (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAsApplied Physics Letters, 1996
- Electronic structure of the neutral manganese acceptor in gallium arsenidePhysical Review Letters, 1987