Photoelastic characterization of undoped semi-insulating GaAs wafers with a high-spatial-resolution infrared polariscope
- 24 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- High-sensitivity computer-controlled infrared polariscopeReview of Scientific Instruments, 1993
- Quantitative photoelastic measurement of residual strains in undoped semi-insulating gallium arsenideApplied Physics Letters, 1985