Excitation efficiency in thin-film electroluminescent devices: Probe layer measurements
- 1 February 1993
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 73 (3) , 1435-1442
- https://doi.org/10.1063/1.353242
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- On the excitation efficiency in ZnS:Mn thin-film electroluminescent devicesJournal of Applied Physics, 1992
- Impact excitation in ZnS-type electroluminescenceJournal of Applied Physics, 1991
- Physics and technology of thin film electroluminescent displaysSemiconductor Science and Technology, 1991
- De-Excitation Processes and Efficiency in ALE ZnS: Mn Thin Film Electroluminescent DevicesPhysica Status Solidi (a), 1990
- Decay of ZnS:Mn emission in thin films — revisitedJournal of Crystal Growth, 1990
- Efficiency and Saturation in AC Thin Film EL StructuresPhysica Status Solidi (a), 1984
- A simple model for the hysteretic behavior of ZnS:Mn thin film electroluminescent devicesJournal of Applied Physics, 1982
- Probe layer measurements of electroluminescence excitation in ac thin-film devicesJournal of Applied Physics, 1981
- Electroluminescence efficiency profiles of Mn in ZnS ac thin-film electroluminescence devicesApplied Physics Letters, 1979
- A.C. electroluminescence of ZnS:LnF3 and ZnS:Mn thin films. Excitation mechanisms and memory effectsJournal of Luminescence, 1979