The Role of thin Low Temperature Deposited GaAs Films on the two Step Growth of GaAs on Si By Mocvd
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Improvements in the heteroepitaxy of GaAs on SiApplied Physics Letters, 1987
- Characterization of Lattice Defect Structures at GaAs/Si Interface by Transmission Electron MicroscopyJapanese Journal of Applied Physics, 1986
- Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVDJapanese Journal of Applied Physics, 1984