The growth of CoSi2 thin film in Co/W/Si(100) multilayer structures
- 30 November 2003
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 128 (6-7) , 239-244
- https://doi.org/10.1016/j.ssc.2003.08.013
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Effects of Ti thickness on epitaxial CoSi2 growth from Co/Ti bilayerJournal of Materials Science Letters, 1997
- On the formation of epitaxial CoSi2 from the reaction of Si with a Co/Ti bilayerApplied Physics Letters, 1995
- Epitaxial CoSi2 films on Si(100) by solid-phase reactionJournal of Applied Physics, 1994
- Epitaxial growth of CoSi2 on Si wafer using Co/Ta bilayerJournal of Applied Physics, 1993
- Epitaxial growth of CoSi2 on both (111) and (100) Si substrates by multistep annealing of a ternary Co/Ti/Si systemJournal of Applied Physics, 1993
- Nanoscale CoSi2 contact layer growth from deposited Co/Ti multilayers on Si substratesApplied Physics Letters, 1992
- Resistance and structural stabilities of epitaxial CoSi2 films on (001) Si substratesJournal of Applied Physics, 1992
- Formation of epitaxial CoSi2 films on (001) silicon using Ti-Co alloy and bimetal source materialsJournal of Applied Physics, 1991
- Growth of epitaxial CoSi2 on (100)SiApplied Physics Letters, 1991
- Characterization of a Self‐Aligned Cobalt Silicide ProcessJournal of the Electrochemical Society, 1987