Dissociative electron attachment in NO

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Abstract
Previously reported experimental data on dissociative electron attachment (DEA) in NO are reinterpreted. The negative‐ion yield resulting from DEA in NO has peak intensities at electron energies around 8 and 9 eV. It is demonstrated that the 8 and 9 eV peaks are due to O− ions and long‐lived N− ions, respectively. It is also shown that the O− ions are produced via the single repulsive state, NO−(1π−12π2)1Δ. The possibility that two or more NO− repulsive states might be involved is ruled out. It is further argued that the long‐lived N− ions are produced via electron attachment to an excited state of NO, rather than to the ground state. The responsible excited state is believed to be the metastable NO(1π−12π)4Π state.