Defects introduced by high temperature electron irradiation in n-GaAs
- 1 February 1983
- journal article
- Published by Elsevier in Physica B+C
- Vol. 116 (1-3) , 394-397
- https://doi.org/10.1016/0378-4363(83)90279-6
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- An annealing study of electron irradiation-induced defects in GaAsJournal of Applied Physics, 1980
- Energy dependence of deep level introduction in electron irradiated GaAsJournal of Applied Physics, 1980
- Electron traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977