Measurement of energy band gap using an electrolyte-semiconductor junction: Water–gallium indium arsenide alloys
- 1 September 1975
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (9) , 3941-3945
- https://doi.org/10.1063/1.322142
Abstract
Energy band gaps of semiconductors are usually obtained by optical transmission measurements through bulk samples. Such measurements on epitaxial layers are difficult due to absorption in the substrate. A technique utilizing the photogeneration of carriers at an electrolyte-semiconductor junction is described for the measurement of the energy gap of epitaxial layers. Results of measurements of the band gap of GaInAs alloy films on GaAs substrates are presented.This publication has 11 references indexed in Scilit:
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