Doping Effect of Oxygen on Horizontal Bridgman Grown InP
- 1 October 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (10)
- https://doi.org/10.1143/jjap.20.1815
Abstract
The doping effect of oxygen in melt grown InP was investigated by both Hall measurement and thermodynamical analysis. In the case when an oxygen doped crystal was grown only in the high-temperature zone, the carrier concentrations were reduced considerably due to the decrease of Si concentration in the InP crystal, and this was explained satisfactorily by the thermodynamical calculations on InP-In2O3 system. Hall measurement up to a high temperature revealed that the oxygen atoms did not behave as shallow nor deep impurities in the crystal.Keywords
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