Monte Carlo simulation of the transport process in the growth ofa-Si:H prepared by cathodic reactive sputtering
- 1 January 1990
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (1) , 477-482
- https://doi.org/10.1063/1.345228
Abstract
The transport process of sputtered Si atoms from the target to the substrate, crossing an argon‐hydrogen plasma, is modeled by using Monte Carlo techniques. The hydrogen and argon partial pressures, the dark zone voltage, and the target‐substrate distance are varied in the calculations. The effect of the above‐mentioned parameters upon the thermalization and energy distribution of atoms arriving at the substrate is calculated, allowing the determination of the growth conditions that minimize the damage produced on the films by highly energetic atoms, while maintaining a reasonable growth rate.This publication has 12 references indexed in Scilit:
- Thin film nucleation and growth kineticsApplied Surface Science, 1988
- The influence of deposition parameters on the properties of amorphous silicon thin films produced by the magnetron sputtering methodThin Solid Films, 1984
- Monte Carlo simulation of the particle transport process in sputter depositionThin Solid Films, 1984
- Monte Carlo simulation of thermalization process of sputtered particlesSurface Science, 1983
- Properties of amorphous hydrogenated silicon, with special emphasis on preparation by sputteringSolar Energy Materials, 1981
- Thermalization of sputtered atomsJournal of Applied Physics, 1981
- Microstructure and properties of rf-sputtered amorphous hydrogenated silicon filmsJournal of Applied Physics, 1981
- Influence of sputtering conditions on H content and SiH bonding in aSi: H alloysJournal of Non-Crystalline Solids, 1981
- Sputtered hydrogenated amorphous siliconJournal of Electronic Materials, 1979
- II. The energy spectrum of ejected atoms during the high energy sputtering of goldPhilosophical Magazine, 1968