The influence of deposition parameters on the properties of amorphous silicon thin films produced by the magnetron sputtering method
- 1 February 1984
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 112 (1) , 51-60
- https://doi.org/10.1016/0040-6090(84)90501-7
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Studies of thin-film growth of sputtered hydrogenated amorphous siliconSolar Energy Materials, 1982
- Amorphous silicon p-i-n solar cells fabricated by reactive sputteringApplied Physics Letters, 1982
- Properties of amorphous hydrogenated silicon, with special emphasis on preparation by sputteringSolar Energy Materials, 1981
- Transport properties of a-Si: H alloys prepared by r.f. sputtering IPhilosophical Magazine Part B, 1981
- Recent developments in amorphous silicon solar cellsSolar Energy Materials, 1980
- Properties of Amorphous Si Prepared by RF Sputtering with a High Ar PressureJapanese Journal of Applied Physics, 1980
- Influence of Oxygen and Deposition Conditions on RF-Sputtered Amorphous Si FilmsJapanese Journal of Applied Physics, 1979
- Influence of deposition conditions on sputter-deposited amorphous siliconJournal of Applied Physics, 1978
- Preparation of highly photoconductive amorphous silicon by rf sputteringSolid State Communications, 1977
- Structural, Optical, and Electrical Properties of Amorphous Silicon FilmsPhysical Review B, 1970