Amorphous silicon p-i-n solar cells fabricated by reactive sputtering
- 15 March 1982
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (6) , 515-517
- https://doi.org/10.1063/1.93162
Abstract
We report, for the first time, the fabrication of indium‐tin‐oxide p‐i‐n amorphous silicon solar cells by the method of reactive sputtering. These solar cells exhibit power conversion efficiency of 4.0% under AM1 illumination. The junction characteristics of these solar cells are discussed.Keywords
This publication has 12 references indexed in Scilit:
- Effect of hydrogen on the density of gap states in reactively sputtered amorphous siliconPhysical Review B, 1981
- Recent developments in amorphous silicon solar cellsSolar Energy Materials, 1980
- Electroreflectance in hydrogenated amorphous siliconPhysical Review B, 1980
- Photovoltaic properties of reactively sputtered a-SiHx filmsJournal of Non-Crystalline Solids, 1980
- Optical constants of rf sputtered hydrogenated amorphous SiPhysical Review B, 1979
- Infrared vibrational spectra of rf-sputtered hydrogenated amorphous siliconPhysical Review B, 1978
- R.F. sputtered amorphous silicon schottky Barrier solar cellsRevue de Physique Appliquée, 1978
- Doped amorphous semiconductorsAdvances in Physics, 1977
- Preparation of highly photoconductive amorphous silicon by rf sputteringSolid State Communications, 1977
- Doping, Schottky barrier and pn junction formation in amorphous germanium and silicon by rf sputteringSolid State Communications, 1976