Electroreflectance in hydrogenated amorphous silicon
- 15 May 1980
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 21 (10) , 4721-4728
- https://doi.org/10.1103/physrevb.21.4721
Abstract
Electroreflectance (ER) measurements have been performed on a number of sputtered hydrogenated amorphous silicon films in the vicinity of the absorption edge. The results confirm features seen in unmodulated spectra but do not show any new details. The usefulness of ER is assessed, and a model is advanced to explain the occurrence and spectral dependence of the phenomenon in amorphous silicon.Keywords
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