D.C. measurement of the space charge capacitance and impurity profile beneath the gate of an MOST
- 30 November 1971
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 14 (11) , 1099-1106
- https://doi.org/10.1016/0038-1101(71)90021-9
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Silicon Impurity Distribution as Revealed by Pulsed MOS C-V MeasurementsJournal of the Electrochemical Society, 1971
- On the Measurement of Impurity Atom Distributions by the Differential Capacitance Technique [Letter to the Editor]IBM Journal of Research and Development, 1969
- Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditionsSolid-State Electronics, 1966
- Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structuresSolid-State Electronics, 1965
- Observation of Impurity Redistribution During Thermal Oxidation of Silicon Using the MOS StructureJournal of the Electrochemical Society, 1965
- Redistribution of Acceptor and Donor Impurities during Thermal Oxidation of SiliconJournal of Applied Physics, 1964
- Space Charge Calculations for SemiconductorsJournal of Applied Physics, 1958