Improved Schottky capacitance spectroscopy method for the study of interface states in metal-semiconductor junctions
- 1 December 1984
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (11) , 1212-1214
- https://doi.org/10.1063/1.95101
Abstract
Schottky capacitance spectroscopy is an electrical method allowing the characterization of interface states at a metal-semiconductor junction. This method is based on the study of the capacitance of a forward biased Schottky diode as a function of bias, temperature, and frequency. The experimental procedure previously described presents the drawback of being very time consuming because of the need for low-frequency measurements. We describe here a new improved method allowing rapid and straightforward spectroscopy with high-energy resolution.Keywords
This publication has 5 references indexed in Scilit:
- A study of interface states in metal-GaAs 〈110〉 structures by Schottky capacitance spectroscopyJournal of Applied Physics, 1983
- Study of metal-semiconductor interface states using Schottky capacitance spectroscopyJournal of Physics C: Solid State Physics, 1983
- Interface states in a cleaved metal-silicon junctionJournal of Applied Physics, 1979
- Electron traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974