Hall effect in high-purity and p-doped germanium crystals
- 1 September 1974
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (9) , 3949-3954
- https://doi.org/10.1063/1.1663894
Abstract
Experimental and theoretical investigations of the Hall effect were carried out in high‐purity (1010‐cm−3 carrier concentration) germanium crystals. Optical phonon scattering, which was not included in the previous work on the calculation of the Hall coefficient factor , is included in the present calculation. Extensive numerical calculations were performed for vs 1/T for both the spherical‐band model and the anisotropic model of Beer and Willardson. Measurements and calculations of the Hall coefficient vs 1/T are in excellent agreement.
This publication has 9 references indexed in Scilit:
- High Purity Germanium - Low Temperature Hall AnalysesIEEE Transactions on Nuclear Science, 1974
- Analysis of Lattice and Ionized Impurity Scattering in-Type GermaniumPhysical Review B, 1962
- Fine structure in the Hall coefficientJournal of Physics and Chemistry of Solids, 1959
- Lattice mobility of hot carriersJournal of Physics and Chemistry of Solids, 1959
- Hall and Transverse Magnetoresistance Effects for Warped Bands and Mixed ScatteringPhysical Review B, 1958
- Evaluation of Transport Integrals for Mixed Scattering and Application to Galvanomagnetic EffectPhysical Review B, 1957
- Magnetoconductivity in-Type GermaniumPhysical Review B, 1957
- Field Dependence of MagnetoconductivityPhysical Review B, 1956
- Transverse Hall and Magnetoresistance Effects in-Type GermaniumPhysical Review B, 1954