Semiconductor strained layers

This publication has 46 references indexed in Scilit:

• Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy
  Applied Physics Letters, 1997
• Schottky barrier detectors on GaN for visible–blind ultraviolet detection
  Applied Physics Letters, 1997
• Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
  Applied Physics Letters, 1997
• Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
  Applied Physics Letters, 1997
• Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime
  Applied Physics Letters, 1997
• Blue-Green Light-Emitting Diodes and Violet Laser Diodes
  MRS Bulletin, 1997
• GaN/AIGaN Heterostructure Devices: Photodetectors and Field-Effect Transistors
  MRS Bulletin, 1997
• InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
  Japanese Journal of Applied Physics, 1996
• Band-structure engineering in strained semiconductor lasers
  IEEE Journal of Quantum Electronics, 1994
• Strained layer heterostructures, and their applications to MODFETs, HBTs, and lasers
  Proceedings of the IEEE, 1993