Life Test of 30 mW GaAlAs TAL Laser Grown by OMVPE
- 1 July 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (7A) , L455
- https://doi.org/10.1143/jjap.22.l455
Abstract
Operating life data taken at 70 and 80°C at an output power level of 30 mW cw from one facet are presented for a protonisolated stripe, (Ga, Al)As Thin Active Layer DH laser grown by Organo-Metallic Vapor Phase Exitaxy, and mounted epi-side up on a Si submount with Sn solder. Median life of 450 h at 80°C ambient and 2500 h at 70°C ambient was observed. The failure mode is gradual increase of threshold current combined with decrease of the kink power level below the operating point.Keywords
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