High Performance 880 nm (GaAl)As/GaAs Oxide Stripe Lasers with Very Low Degradation Rates at Temperatures up to 120°C

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Abstract
A practical (GaAl)As/GaAs oxide stripe laser has been developed which has i) very low degradation rates (about 10-5 h-1 at 100°C to 120°C heat sink temperature) even at 880 nm, ii) high characteristic temperature (T 0=200 K to 240 K), iii) stable, linear characteristics up to high optical output and temperatures. The high-temperature degradation data at 5 mW per mirror are comparable to those of high-quality (GaAl)As IRED-s.
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