The reliability of a practical Ga1-xAlxAs laser device
- 1 January 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 15 (1) , 11-13
- https://doi.org/10.1109/jqe.1979.1069890
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- Suppression of output nonlinearities in double-heterostructure lasers by use of misaligned mirrorsApplied Physics Letters, 1977
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- Accelerated Life Test of AlGaAs–GaAs DH LasersJapanese Journal of Applied Physics, 1977
- Enhanced degradation rates in temperature-sensitive Ga1-xAlxAs lasersIEEE Journal of Quantum Electronics, 1977
- Initial degradation mode of long-life (GaAl)As-GaAs lasersApplied Physics Letters, 1977
- Reliability of DH GaAs lasers at elevated temperaturesApplied Physics Letters, 1975
- Degradation of AlxGa1−xAs heterojunction electroluminescent devicesApplied Physics Letters, 1974
- JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATUREApplied Physics Letters, 1970