Accelerated step-temperature aging of AlxGa1−xAs heterojunction laser diodes
- 1 March 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (5) , 305-308
- https://doi.org/10.1063/1.90030
Abstract
Double‐heterojunction Al0.3Ga0.7As/Al0.08Ga0.92As lasers (oxide‐striped and Al2O3 facet coated) were subjected to step‐temperature aging from 60 to 100 °C. The change in threshold current and spontaneous output was monitored at 22 °C. The average time required for a 20% pulsed threshold current increases from about 500 h, when operating at 100 °C, to about 5000 h at 70 °C. At 22 °C, the extrapolated time is about 106 h. The time needed for a 50% spontaneous emission reduction is of the same order of magnitude. The resulting ’’activation energies’’ are ∼0.95 eV for laser degradation and ∼1.1 eV for the spontaneous output decrease.Keywords
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