Degradation of AlxGa1−xAs heterojunction electroluminescent devices
- 1 July 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (1) , 82-85
- https://doi.org/10.1063/1.1655290
Abstract
Experimental results are presented correlating the operating life of (AlGa)As heterojunction diodes with recombination region doping and Al concentration. For a given doping level, the operating life is shown to increase with the addition of Al. The relationship between spontaneous emission degradation and lasing properties has also been studied.Keywords
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