Initial degradation mode of long-life (GaAl)As-GaAs lasers
- 1 February 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (3) , 167-169
- https://doi.org/10.1063/1.89320
Abstract
A rapid degradation mode is observed for most of our long‐life lasers (⩾5000 h) within the first 100 h of cw operation at room temperature. This degradation saturates thereafter and can be recovered by annealing at temperatures below 150 °C. It is shown that the reduction of gain as a result of decrease in recombination efficiency is the cause for the degradation. Addition of Al(⩾6%) in the active region is found to eliminate the degradation.Keywords
This publication has 26 references indexed in Scilit:
- Continuous operation over 10 000 h of GaAs/GaAlAs double-heterostructure laser without lattice mismatch compensationApplied Physics Letters, 1975
- Heterojunction diodes of (AlGa)As−GaAs with improved degradation resistanceApplied Physics Letters, 1975
- Reliability of DH GaAs lasers at elevated temperaturesApplied Physics Letters, 1975
- Role of mechanical stresses in gradual degradation of light-emitting diodes and injection lasersSoviet Journal of Quantum Electronics, 1975
- Growth of Dark Lines from Crystal Defects in GaAs-GaAlAs Double Heterostructure CrystalsJapanese Journal of Applied Physics, 1974
- Effect of doping on degradation of GaAs–Alx Ga1−xAs injection lasersApplied Physics Letters, 1974
- Lasing Characteristics in a Degraded GaAs–AlxGa1-xAs Double Heterostructure LaserJapanese Journal of Applied Physics, 1974
- Degradation mechanism of (Al · Ga)As double-heterostructure laser diodesApplied Physics Letters, 1974
- Continuous operation of GaAs–Ga1 − xAlxAs double-heterostructure lasers with 30 °C half-lives exceeding 1000 hApplied Physics Letters, 1973
- Degradation of CW GaAs double-heterojunction lasers at 300 KProceedings of the IEEE, 1973