Effect of doping on degradation of GaAs–Alx Ga1−xAs injection lasers
- 15 June 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 24 (12) , 595-597
- https://doi.org/10.1063/1.1655068
Abstract
The influence of the active layer dopant on the degradation of GaAs–Alx Ga1−xAs double‐heterostructure lasers has been studied using pulsed excitation. Compensated p ‐type dopants give the slowest degradation, while n ‐type dopants give the most rapid. These results can be understood on the basis of arsenic vacancy migration and the formation of arsenic vacancy‐acceptor complexes.Keywords
This publication has 15 references indexed in Scilit:
- Measurement of minority carrier lifetime during gradual degradation of GaAs-Ga1-xAlxAs double- heterostructure lasersIEEE Journal of Quantum Electronics, 1974
- Determination of the Solidus and Gallium and Phosphorus Vacancy Concentrations in GaPJournal of the Electrochemical Society, 1974
- Stress compensation in Ga1−xAlxAs1−yPy LPE layers on GaAs substratesApplied Physics Letters, 1973
- Defect structure introduced during operation of heterojunction GaAs lasersApplied Physics Letters, 1973
- Degradation characteristics of cw optically pumped AlxGa1−xAs heterostructure lasersApplied Physics Letters, 1973
- Continuous operation of GaAs–Ga1 − xAlxAs double-heterostructure lasers with 30 °C half-lives exceeding 1000 hApplied Physics Letters, 1973
- Strain-induced degradation of GaAs injection lasersApplied Physics Letters, 1973
- Gradual degradation of GaAs double-heterostructure lasersIEEE Journal of Quantum Electronics, 1973
- GaAs–AlxGa1−xAs Double Heterostructure Lasers—Effect of Doping on Lasing Characteristics of GaAsJournal of Applied Physics, 1972
- Calculations of point defect concentrations and nonstoichiometry in GaAsJournal of Physics and Chemistry of Solids, 1971