An ultra-low noise cryogenic Ka-Band InGaAs/InAlAs/InP HEMT front-end receiver
- 1 October 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 4 (10) , 329-331
- https://doi.org/10.1109/75.324706
Abstract
We present here the design and performance of a 4-stage Ka-band cryogenic amplifier using a front-end 0.1-/spl mu/m gate length InP HEMT. The amplifier demonstrated 20-25 K uncorrected noise temperature (/spl sim/0.3-dB noise figure) from 31-33 GHz with 30-33 dB associated gain at 12 K ambient temperature. To date, this is the best reported HEMT cryogenic amplifier performance at this frequency band and is a factor of two improvement in noise temperature compared to previous designs.Keywords
This publication has 8 references indexed in Scilit:
- W-band and D-band low noise amplifiers using 0.1 micron pseudomorphic InAlAs/InGaAs/InP HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A high performance and low DC power V-band MMIC LNA using 0.1 mu m InGaAs/InAlAs/InP HEMT technologyIEEE Microwave and Guided Wave Letters, 1993
- Characteristics of 0.8- and 0.2- mu m gate length In/sub x/Ga/sub 1-x/As/In/sub 0.52/Al/sub 0.48/As/InP (0.53>or=x>or=0.70) modulation-doped field-effect transistors at cryogenic temperaturesIEEE Transactions on Electron Devices, 1992
- 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistorsIEEE Transactions on Electron Devices, 1992
- Schottky barrier heights of n-type and p-type Al/sub 0.48/In/sub 0.52/AsIEEE Electron Device Letters, 1991
- A super low-noise 0.1 mu m T-gate InAlAs-InGaAs-InP HEMTIEEE Microwave and Guided Wave Letters, 1991
- Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependenceIEEE Transactions on Microwave Theory and Techniques, 1989
- 32-GHz cryogenically cooled HEMT low-noise amplifiersIEEE Transactions on Electron Devices, 1989