Hot-electron dynamics in SiO2 and the degradation of the Si/SiO2-interface
- 31 August 1993
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 22 (1-4) , 207-210
- https://doi.org/10.1016/0167-9317(93)90158-2
Abstract
No abstract availableKeywords
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