Deep-level photoluminescence emission in heavily Be-doped CBE-grown InP: an explanation of low Be acceptor activity
- 1 February 1991
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 6 (2) , 125-128
- https://doi.org/10.1088/0268-1242/6/2/012
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Chemical beam epitaxy of indium phosphideJournal of Crystal Growth, 1990
- Doping studies using thermal beams in chemical-beam epitaxyJournal of Applied Physics, 1986
- Surface effect-induced fast Be diffusion in heavily doped GaAs grown by molecular-beam epitaxyJournal of Applied Physics, 1986
- A photoluminescence study of Cd-related centers in InPJournal of Applied Physics, 1985
- Gas source MBE of InP and GaxIn1−xPyAs1−y : Materials properties and heterostructure lasersJournal of Vacuum Science & Technology B, 1985
- Photoluminescence identification of the C and Be acceptor levels in InPJournal of Electronic Materials, 1984
- Investigation of process-induced defects in InPPhysica B+C, 1983
- Electrical and optical properties of Be-doped InP grown by molecular beam epitaxyJournal of Applied Physics, 1983
- Photoluminescence study of native defects in InPApplied Physics Letters, 1981
- Excitation-dependent emission in Mg-, Be-, Cd-, and Zn-implanted GaAsJournal of Applied Physics, 1977