Electrical and optical properties of Be-doped InP grown by molecular beam epitaxy

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Abstract
Beryllium‐doped InP layers have been grown on (100) InP substrates by molecular beam epitaxy. Room temperature hole concentrations as high as 6×1018 cm−3 have been successfully achieved. The activation energy (∼14 meV) of Be acceptor in InP with the room temperature hole concentrations of ∼1017 cm−3 is smaller than those of Zn(∼30 meV) and Cd(∼38 meV) acceptors in InP with the same hole concentrations. The photoluminescence spectrum at 77 K has a near band emission (1.41 eV) and a Be‐related emission (1.38 eV). InGaAs/InP double heterostructure laser diodes were also successfully fabricated by using Be as a p‐type dopant, and room temperature pulse operation has been achieved in these laser diodes.