〈100〉 dark line defect in II-VI blue-green light emitters

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Abstract
We have carried out a microstructural study of the 〈100〉 dark line defect that forms during degradation of II‐VI blue‐green light emitters. We find that these defects lie in or near the ZnCdSe quantum well and do not correspond to a readily observable dislocation network in transmission electron microscopy studies. We speculate that they may consist of point defects or small point defect complexes. We have also carried out estimates of point defect migration rates during device operation that can give rise to such degradation.