Dependence of T0 on P-Cladding Layer Doping Level in InGaAsP Lasers
- 1 September 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (9A) , L559
- https://doi.org/10.1143/jjap.22.l559
Abstract
The effects of the doping level in the P-cladding layer on the T 0 of InGaAsP lasers have been investigated. A threshold temperature parameter T 0 as high as 90 K has been observed. A new laser structure which involves a simple modification scheme applicable to most laser structures with improved temperature sensitivity has been demonstrated.Keywords
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