Barrier composition and electrical properties of high-quality all-niobium Josephson tunnel junctions
- 1 February 1983
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (2) , 1115-1119
- https://doi.org/10.1063/1.332128
Abstract
A fabrication procedure for all‐niobium tunnel junctions with oxide tunnel barriers is described. All steps of the tunnel‐barrier growth have been characterized in situ with the help of x‐ray photoelectron spectroscopy. The chemical composition of the barrier is described, and the properties of devices discussed. The results demonstrate the application potential of these all‐refractory junctions.This publication has 13 references indexed in Scilit:
- Structure of a Nb oxide tunnel barrier in a Josephson junctionJournal of Applied Physics, 1982
- Selective niobium anodization process for fabricating Josephson tunnel junctionsApplied Physics Letters, 1981
- Tunneling Characteristics of NbN/NbN Josephson Junctions with Glow-Discharge-Produced Amorphous Silicon BarriersJapanese Journal of Applied Physics, 1981
- Effects of sputtering on the surface composition of niobium oxidesJournal of Vacuum Science and Technology, 1981
- Superconductivity and the b.c.c. to A-15 transformation in Nb-Au alloys†Journal of Physics and Chemistry of Solids, 1981
- Niobium oxide-barrier tunnel junctionIEEE Transactions on Electron Devices, 1980
- Oxidized amorphous-silicon superconducting tunnel junction barriersApplied Physics Letters, 1980
- Fabrication and Properties of Niobium Josephson Tunnel JunctionsIBM Journal of Research and Development, 1980
- New technique for electron-tunneling junction fabrication and its application to tantalum and niobiumPhysical Review B, 1978
- Nb-Nb thin-film Josephson junctionsJournal of Applied Physics, 1976